广州第三代半导体创新中心论文发表
1 Recent advances in micro-supercapacitors for AC line-filtering performance: from fundamental models to emerging applications
eScience
DOI：https://doi.org/10.1016/j.esci.2021.11.005
2 Ultrahigh-rate and high-frequency MXene micro-supercapacitors for kHz AC line-filtering
Journal of Energy Chemistry
DOI：https://doi.org/10.1016/j.jechem.2021.11.012
3 Recent advances in micro-supercapacitors for AC line-filtering performance: from fundamental models to emerging applications
eScience
DOI：https://doi.org/10.1016/j.esci.2021.11.005
4 Interface-Modified Ti3C2Tx MXene/1T-WSe2 Heterostructure for High-Capacitance Micro-Supercapacitors
ACS Applied Energy Materials
DOI：https://doi.org/10.1021/acsaem.2c04046
5 A novel CVD graphene-based synaptic transistors with ionic liquid gate
Nanotechnology
DOI：https://doi.org/10.1088/1361-6528/acbc82
6 A novel nonvolatile memory device based on oxidized Ti3C2Tx MXene for neurocomputing application
Carbon
DOI：https://doi.org/10.1016/j.carbon.2023.01.040
7 High efficiency InGaN nanowire tunnel junction green micro-LEDs
Appl. Phys. Lett.
DOI：10.1063/5.0059701
8 Nanoscale and quantum engineering of III-nitride heterostructures for high efficiency UV-C and far UV-C optoelectronics
Jpn. J. Appl. Phys.
DOI：10.35848/1347-4065/ac2918
9 Monolithic integration of multicolor InGaN LEDs with uniform luminescence emission
Opt. Express
DOI：10.1364/OE.435871
10 N-polar InGaN Nanowires: Breaking the Efficiency Bottleneck of Nano and Micro LEDs
Photon. Res.
DOI：10.1364/PRJ.443165
11 High-Speed Electro-Optic Modulators Based on Thin-Film Lithium Niobate
Nanomaterials
DOI：https://doi.org/10.3390/nano14100867
12 Broadband transmissive polarization rotator by gradiently twisted α-MoO3
Applied Physcis Letters
DOI：https://doi.org/10.1063/5.0191145
13 Tunable double notch filter on thin-film lithium niobate platform
Optics Letters
DOI：https://doi.org/10.1364/OL.505362
14 Programmable optical filter in thin-film lithium niobate with simultaneous tunability of extinction ratio and wavelength
Acs Photonics
DOI：https://doi.org/10.1021/acsphotonics.3c00574
15 Improving Linewidth and Extinction Ratio Performances of Lithium Niobate Ring Modulator Using Ring‐Pair Structure
Advanced Photonics Research
DOI：10.1002/adpr.202300169
16 Low Turn-On Voltage and High-Power Figure-of-Merit GaN HEMTs With Reverse Blocking Capability
IEEE Transactions on Electron Devices
DOI: 10.1109/TED.2023.3336645
17 Wafer-Scale GaN-Si(100) Monolithic Heterogeneous Integration Inverters With Improved Output Voltage Swing and Fast Switching Capability by Transfer Printing and Self-Aligned Etching Technology
IEEE Transactions on Electron Devices
DOI：10.1109/TED.2024.3384930
18 High-breakdown-voltage (>3000 V) and low-power-dissipation Al0.3Ga0.7N/GaN/Al0.1Ga0.9N double-heterostructure HEMTs with Ohmic/Schottky hybrid drains and Al2O3/SiO2 passivation
Science China Information science
DOI：10.1007/s11432-022-3707-2
19 High-Performance AlN/GaN MISHEMTs on Si With In-Situ SiN Enhanced Ohmic Contacts for Mobile mm-Wave Front-End Applications
IEEE Electron Device Letters
DOI：10.1109/LED.2023.3265058
20 Demonstration of p-type GaN FinFETs on Silicon Substrates with Ultrahigh Current ON/OFF Ratio of 10(9) and Reduced Interface Trap Density
7th IEEE Electron Devices Technology and Manufacturing Conference (EDTM)
DOI：10.1109/EDTM55494.2023.10103032
21 Deep sub-60 mV/dec subthreshold swing independent of gate bias sweep direction in an in situ SiN/Al0.6Ga0.4N/GaN-on-Si metal-insulator high electron mobility transistor
Applied Physics Letters
DOI：10.1063/5.0131988
22 Low ohmic contact resistivity realized by in situ SiNx insertion for high Al-composition-AlGaN/GaN heterostructure
Applied Physics Letters
DOI：10.1063/5.0100329
23 Demonstration of >8-kV GaN HEMTs With CMOS-Compatible Manufacturing on 6-in Sapphire Substrates for Medium-Voltage Applications
IEEE Transactions on Electron Devices
DOI：10.1109/TED.2024.3392175
24 Experimental Study and Characterization on the Thermo-Electro Multiphysics Coupling Failure of GaN HEMTs Under High-Power Microwave Pulse
IEEE Transactions on Electron Devices
DOI：10.1109/TED.2023.3319277
25 1700 V High-Performance GaN HEMTs on 6-inch Sapphire With 1.5 μm Thin Buffer
IEEE Electron Device Letters
DOI：10.1109/LED.2023.3335393
26 Comparative Investigation on the Repetitive Short-Circuit Capability of 100 V Commercial p-GaN Gate Power HEMTs With Different Processing and Structure
IEEE Transactions on Electron Devices
DOI：10.1109/TED.2024.3365780
27 Improving the Manufacturability of Low-Temperature GaN Ohmic Contact by Blocking the Fluorine Ion Injection
IEEE Journal of the Electron Devices Society
DOI：10.1109/JEDS.2024.3366804
28 Novel In-Situ AlN/p-GaN Gate HEMTs with Threshold Voltage of 3.9 V and Maximum Applicable Gate Voltage of 12.1 V
IEEE Transactions on Electron Devices
DOI：10.1109/TED.2022.3228495
29 Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate
Micromachines
DOI：10.3390/mi15010156
30 Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate
Micromachines
DOI：10.3390/mi14050940
31 Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization
Micromachines
DOI：10.3390/mi14051042
32 Recoverable Current Collapse Effect of p-GaN HEMTs Under Short Circuit Stress
2023 IEEE 2nd International Power Electronics and Application Symposium (PEAS)
DOI：10.1109/PEAS58692.2023.10395456
33 Transparent ITO gate p-GaN/AlGaN/GaN UV photodetector with high responsivity and high PDCR
2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
DOI：10.1109/WiPDAAsia58218.2023.10261914
34 Report of GaN HEMTs on 8-in Sapphire
IEEE Transactions on Electron Devices
DOI：10.1109/TED.2024.3403791
35 p-GaN Gate HEMTs on 6-Inch Sapphire by CMOS-Compatible Process: A Promising Game Changer for Power Electronics
IEEE Transactions on Electron Devices
DOI：10.1109/LED.2024.3401114
